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| Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V = 4.8 A ID25 RDS(on) 1.4 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 20 TC = 25C Maximum Ratings 500 500 30 40 4.8 10 5 20 250 10 89 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W C C C C C TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G DS (TAB) TO-252 (IXTY) G S (TAB) 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 TO-252 (TO-220) 300 260 Md Weight 1.13/10 Nm/lb.in. 4 3 0.8 g g g G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 50A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 500 3.0 5.0 100 5 50 1.4 V V nA A A Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2005 IXYS All rights reserved DS99446(08/05) IXTA 5N50P IXTP 5N50P IXTY 5N50P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 3.0 4.7 620 VGS = 0 V, VDS = 25 V, f = 1 MHz 72 6.3 18 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 20 (External) 18 45 16 12.6 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 4.3 5.0 S pF pF pF ns ns ns ns nC nC nC 1.4 K/W (TO-220) 0.25 K/W Dim. A A1 b b2 c c2 D D1 E E1 e TO-263 (IXTA) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Pins: 1 - Gate 2,4 - Drain 3 - Source Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C unless otherwise specified) Min. typ. Max. 5 15 1.5 400 A A V ns L L1 L2 L3 L4 R TO-220 (IXTP) Outline IF = IS, VGS = 0 V, -di/dt = 100 A/s Pulse test, t 300 s, duty cycle d 2 % TO-252 (IXTY) Outline Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L Millimeter Min. Max. 2.19 0.89 0 0.64 0.76 5.21 0.46 0.46 5.97 4.32 6.35 4.32 2.38 1.14 0.13 0.89 1.14 5.46 0.58 0.58 6.22 5.21 6.73 5.21 Inches Min. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 Max. 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205 Pins: 1 - Gate 3 - Source 2,4 - Drain 2.28 BSC 4.57 BSC 9.40 0.51 0.64 0.89 2.54 10.42 1.02 1.02 1.27 2.92 0.090 BSC 0.180 BSC 0.370 0.020 0.025 0.035 0.100 0.410 0.040 0.040 0.050 0.115 Pins: 1 - Gate 3 - Source 2,4 - Drain L1 L2 L3 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTA 5N50P IXTP 5N50P IXTY 5N50P Fig. 1. Output Characteristics @ 25C 5 VGS = 10V 7V 4 6V 8 7 6V 10 9 VGS = 10V 7V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 3 I D - Amperes 6 5 4 3 2 1 5V 2 5V 1 0 0 1 2 3 4 5 6 7 8 0 0 3 6 9 12 15 18 21 24 27 30 V D S - Volts Fig. 3. Output Characteristics @ 125C 5 VGS = 10V 7V 2.8 3.2 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 4 2.4 2 I D = 5A 1.6 1.2 0.8 0.4 I D = 2.5A I D - Amperes 3 6V 2 1 5V 0 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3.4 3 VGS = 10V TJ = 125 C 6.0 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 5.0 R D S ( o n ) - Normalized 2.6 2.2 1.8 1.4 TJ = 25 C 1 0.6 0 1 2 3 4 5 6 7 8 9 10 1.0 I D - Amperes 4.0 3.0 2.0 0.0 -50 -25 0 25 50 75 100 125 150 I D - Amperes (c) 2005 IXYS All rights reserved TC - Degrees Centigrade IXTA 5N50P IXTP 5N50P IXTY 5N50P Fig. 7. Input Adm ittance 7 6 5 9 8 7 TJ = -40 C 25 C 6 5 4 3 2 1 0 4 4.5 5 5.5 6 6.5 7 1 0 0 1 2 3 4 5 6 7 125 C Fig. 8. Transconductance 4 3 2 TJ = 125 C 25 C -40 C V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 15 10 9 12 8 7 VDS = 250V I D = 2.5A I G = 10mA g f s - Siemens I D - Amperes I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 25 C 0.8 0.9 1 9 TJ = 125 C 6 6 5 4 3 2 1 3 0 0.4 0.5 0.6 0.7 0 0 2 4 6 8 10 12 14 V S D - Volts Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 100 TJ = 1 50 C C iss R DS(on) Limit T C = 25 C Fig. 11. Capacitance 10000 f = 1MHz Capacitance - picoFarads 1000 I D - Amperes 10 25s 1 00s 1 1 ms DC 1 0ms 100 C oss 10 C rss 1 0 5 10 15 20 25 30 35 40 0.1 10 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 V D S - Volts 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTA 5N50P IXTP 5N50P IXTY 5N50P Fig. 13. Maximum Transient Thermal Resistance 10.00 R ( t h ) J C - C / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2005 IXYS All rights reserved |
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